A broadband regenerative frequency divider in InGaP/GaAs HBT technology  

作　　者：张金灿 张玉明 吕红亮 张义门 刘敏 钟英辉 师政 

机构地区：[1]School of Microelectronics,Xidian University,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices

出　　处：《Journal of Semiconductors》2014年第7期139-142,共4页半导体学报（英文版）

基　　金：supported by the National Basic Research Program of China(No.2010CBxxxx05);the Advance Research Project of China(No.51308xxxx06);the Advance Research Foundation of China(No.9140A08xxxx11DZ111)

摘　　要：A dynamic divide-by-two regenerative GaP/GaAs heterojunction bipolar transistors （HBTs） frequency divider （RFD） is presented in a 60-GHz-fT Intechnology. To achieve high operation bandwidth, active loads instead of resistor loads are incorporated into the RFD. On-wafer measurement shows that the divider is operating from 10 GHz up to at least 40 GHz, limited by the available input frequency. The maximum operation frequency of the divider is found to be much higher than fT/2 of the transistor, and also the divider has excellent input sensitivity. The divider consumes 300.85 mW from 5 V supply and occupies an area of 0.47 × 0.22 mm^2.A dynamic divide-by-two regenerative GaP/GaAs heterojunction bipolar transistors （HBTs） frequency divider （RFD） is presented in a 60-GHz-fT Intechnology. To achieve high operation bandwidth, active loads instead of resistor loads are incorporated into the RFD. On-wafer measurement shows that the divider is operating from 10 GHz up to at least 40 GHz, limited by the available input frequency. The maximum operation frequency of the divider is found to be much higher than fT/2 of the transistor, and also the divider has excellent input sensitivity. The divider consumes 300.85 mW from 5 V supply and occupies an area of 0.47 × 0.22 mm^2.

关 键 词：regenerative frequency divider InGaP/GaAs HBT active loads BROADBAND 

分 类 号：TN772[电子电信—电路与系统]