Design consideration and fabrication of 1.2-kV 4H-SiC trenched-and-implanted vertical junction field-effect transistors  

作　　者：陈思哲 盛况 

机构地区：[1]College of Electrical Engineering,Zhejiang University

出　　处：《Chinese Physics B》2014年第7期649-654,共6页中国物理B（英文版）

基　　金：supported by the National High Technology Research and Development Program of China(Grant No.2011AA050401);the National Science Fundfor Distinguished Young Scholars,China(Grant No.51225701)

摘　　要：We present the design consideration and fabrication of 4H-SiC trenched-and-implanted vertical junction field-effect transistors （TI-VJFETs）. Different design factors, including channel width, channel doping, and mesa height, are con- sidered and evaluated by numerical simulations. Based on the simulation result, normally-on and normally-off devices are fabricated. The fabricated device has a 12 μm thick drift layer with 8 × 10^15 cm^-3 N-type doping and 2.6 μm channel length. The normally-on device shows a 1.2 kV blocking capability with a minimum on-state resistance of 2.33 mΩ.cm2, while the normally-off device shows an on-state resistance of 3.85 mΩ.cm2. Both the on-state and the blocking performances of the device are close to the state-of-the-art values in this voltage range.We present the design consideration and fabrication of 4H-SiC trenched-and-implanted vertical junction field-effect transistors （TI-VJFETs）. Different design factors, including channel width, channel doping, and mesa height, are con- sidered and evaluated by numerical simulations. Based on the simulation result, normally-on and normally-off devices are fabricated. The fabricated device has a 12 μm thick drift layer with 8 × 10^15 cm^-3 N-type doping and 2.6 μm channel length. The normally-on device shows a 1.2 kV blocking capability with a minimum on-state resistance of 2.33 mΩ.cm2, while the normally-off device shows an on-state resistance of 3.85 mΩ.cm2. Both the on-state and the blocking performances of the device are close to the state-of-the-art values in this voltage range.

关 键 词：silicon carbide trenched-and-implanted vertical junction field-effect transistor normally-on device normally-off device 

分 类 号：TN386[电子电信—物理电子学]