Effect of alumina thickness on Al_2O_3/InP interface with post deposition annealing in oxygen ambient  

作　　者：杨卓 杨靖治 黄永 张锴 郝跃 

机构地区：[1]State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology,Xidian University

出　　处：《Chinese Physics B》2014年第7期681-685,共5页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant No.61204006);the Fundamental Research Funds for the Central Universities,China(Grant No.K50511250002);the National Key Science and Technology Special Project,China(Grant No.2008ZX01002-002)

摘　　要：In this paper, the effect of alumina thickness on Al2O3/InP interface with post deposition annealing （PDA） in the oxygen ambient is studied. Atomic layer deposited （ALD） Al2O3 films with four different thickness values （5 nm, 7 nm, 9 nm, 11 rim） are deposited on InP substrates. The capacitance-voltage （C-V） measurement shows a negative correlation between the alumina thickness and the frequency dispersion. The X-ray photoelectronspectroscopy （XPS） data present significant growth of indium-phosphorus oxide near the Al2O3/InP interface, which indicates serious oxidation of InP during the oxygen annealing. The hysteresis curve shows an optimum thickness of 7 nm after PDA in an oxygen ambient at 500 ℃ for 10 min. It is demonstrated that both sides of the interface are impacted by oxygen during post deposition annealing. It is suggested that the final state of the interface is of reduced positively charged defects on Al2O3 side and oxidized InP, which degrades the interface.In this paper, the effect of alumina thickness on Al2O3/InP interface with post deposition annealing （PDA） in the oxygen ambient is studied. Atomic layer deposited （ALD） Al2O3 films with four different thickness values （5 nm, 7 nm, 9 nm, 11 rim） are deposited on InP substrates. The capacitance-voltage （C-V） measurement shows a negative correlation between the alumina thickness and the frequency dispersion. The X-ray photoelectronspectroscopy （XPS） data present significant growth of indium-phosphorus oxide near the Al2O3/InP interface, which indicates serious oxidation of InP during the oxygen annealing. The hysteresis curve shows an optimum thickness of 7 nm after PDA in an oxygen ambient at 500 ℃ for 10 min. It is demonstrated that both sides of the interface are impacted by oxygen during post deposition annealing. It is suggested that the final state of the interface is of reduced positively charged defects on Al2O3 side and oxidized InP, which degrades the interface.

关 键 词：AL2O3 oxygen annealing capacitance-voltage measurement hysteresis curve 

分 类 号：O441[理学—电磁学]