Degradation of ferroelectric and weak ferromagnetic properties of BiFeO_3 films due to the diffusion of silicon atoms  

作　　者：肖仁政 张早娣 Vasiliy O.Pelenovich 王泽松 张瑞 李慧 刘雍 黄志宏 付德君 

机构地区：[1]Key Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education,School of Physics and Technology,Wuhan University [2]Department of Physics and Technology,Huazhong Normal University

出　　处：《Chinese Physics B》2014年第7期712-716,共5页中国物理B（英文版）

基　　金：supported by the International Cooperation Program of the Ministry of Science and Technology of China(Grant No.2011DFR50580);the NationalNatural Science Foundation of China(Grant Nos.11105100,11205116,and 11350110206)

摘　　要：Crystalline BiFeO3 （BFO） films each with a crystal structure of a distorted rhombohedral perovskite are characterized by X-ray diffraction （XRD） and high-resolution electron microscopy （HRTEM）. The diffusion of silicon atoms from the substrate into the BiFeO3 film is detected by Rutherford backscattering spectrometry （RBS）. The element analysis is per- formed by energy dispersive X-ray spectroscopy （EDS）. Simulation results of RBS spectrum show a visualized distribution of silicon. X-ray photoelectron spectroscopy （XPS） indicates that a portion of silica is formed in the diffusion process of silicon atoms. Ferroelectric and weak ferromagnetic properties of the BFO films are degraded due to the diffusion of silicon atoms. The saturation magnetization decreases from 6.11 down to 0.75 emu/g, and the leakage current density increases from 3.8 × 10^-4 upto7.1 × 10^-4 A/cm-2.Crystalline BiFeO3 （BFO） films each with a crystal structure of a distorted rhombohedral perovskite are characterized by X-ray diffraction （XRD） and high-resolution electron microscopy （HRTEM）. The diffusion of silicon atoms from the substrate into the BiFeO3 film is detected by Rutherford backscattering spectrometry （RBS）. The element analysis is per- formed by energy dispersive X-ray spectroscopy （EDS）. Simulation results of RBS spectrum show a visualized distribution of silicon. X-ray photoelectron spectroscopy （XPS） indicates that a portion of silica is formed in the diffusion process of silicon atoms. Ferroelectric and weak ferromagnetic properties of the BFO films are degraded due to the diffusion of silicon atoms. The saturation magnetization decreases from 6.11 down to 0.75 emu/g, and the leakage current density increases from 3.8 × 10^-4 upto7.1 × 10^-4 A/cm-2.

关 键 词：FERROELECTRIC FERROMAGNETIC DIFFUSION silicon 

分 类 号：O469[理学—凝聚态物理]