NiTi形状记忆合金薄膜的残余应力  

Residual Stress Study of NiTi Shape Memory Alloy Thin Films

作　　者：吴廷斌[1] 漆璿[1] 王文杰[1] 董荆山[1] 江伯鸿[1] 王莉[2] 蔡炳初[2] 

机构地区：[1]上海交通大学国家教育部高温材料及高温测试重点实验室,上海200030 [2]上海交通大学国家教育部薄膜与微细加工技术开放实验室,上海200030

出　　处：《上海交通大学学报》2001年第3期436-439,共4页Journal of Shanghai Jiaotong University

基　　金：国家教育部薄膜与微细加工技术开放实验室资助

摘　　要：采用 X射线掠射法和轮廓法 ,测量了单晶 Si基板上用磁控溅射法制备的 Ni Ti形状记忆合金薄膜的残余应力 ,分析了其与薄膜厚度以及晶化处理温度等工艺条件的关系 .结果表明 :该薄膜中的残余应力主要来源于薄膜同基板材料的膨胀系数和晶格参数不匹配 ;薄膜厚度越大 ,残余应力越小 ;晶化处理温度对因热胀系数差异带来的热拉应力因马氏体相变而致的相变压应力均有不同程度的影响 .Residual stress in NiTi shape memory alloy thin film was measured by X-ray glancing and contour method separately. The effect of annealing temperature and film thickness on residual stress was also analyzed. The derivative of the residual stress mainly results from the dismatch of expansion coefficient and crystal parameters. The thicker the film is, the lower the residual stress is. And the influence of annealing temperature was also found to be caused by the expansion coefficient difference and martensitic transition.

关 键 词：形状记忆合金 薄膜 残余应力 镍 钛 膨胀系数 晶格参数 晶化处理 

分 类 号：TG484.2[金属学及工艺—焊接] TG139.6[一般工业技术—材料科学与工程]