铁磁层/导电层/铁磁层多层膜中巨磁阻抗效应理论  

Theory of Giant Magneto-Impedance Effect in Multilayered Thin Film

作　　者：禹金强[1] 周勇[1] 蔡炳初[1] 徐东[1] 

机构地区：[1]上海交通大学信息存储研究中心国家教委薄膜与微细技术部门开放实验室,上海200030

出　　处：《功能材料》2001年第2期129-131,共3页Journal of Functional Materials

摘　　要：采用经典电磁理论，对铁磁层／导电层／铁磁层（Ｍ／Ｃ／Ｍ）多层膜中出现的巨磁阻抗效应进行了理论分析。对于单轴横向磁各向异性多层膜，理论计算结果表明：高频阻抗在某一外加磁场（近似等于等效各向异性场）下出现最大值，铁磁层和导电层电阻率相差较大的多层膜中将出现较强的巨磁阻抗效应。多层膜在１ＭＨｚ附近即可出现远大于单层膜的阻抗变化比。多层膜理论计算与实验结果能够较好地符合。Giant magneto-impedance effect in multilayered film was investigated theoretically according to the classical electromagnetic theory. The theoretical results of multilayered film with transverse magnetic anisotropy show that, the maximum impedance occurs when magnetic field is close to the effective anisotropy field at high frequencies, smaller resistivity of the conducted layer would lead to a larger impedance change ratio in multilayered film. At 1 MHz the impedance change ratio in layered films is much larger than that in single film. The theoretical results agree qualitatively with experimental ones.

关 键 词：巨磁阻抗效应 多层膜 横向磁各向异性 

分 类 号：O484.43[理学—固体物理] TM27[理学—物理]