电子元器件及电路的剂量率效应测试技术研究  

Measurement of Dose Rate Effects on Electronic Devices and Circuits

作　　者：王桂珍[1] 龚建成[1] 姜景和[1] 吴国荣[1] 林东升[1] 常冬梅[1] 

机构地区：[1]西北核技术研究所,陕西西安710024

出　　处：《微电子学》2001年第2期130-134,共5页Microelectronics

摘　　要：介绍了半导体器件与电路的剂量率效应及其测试方法。主要分析了分立器件和集成电路的效应机理和建立的光电流测试系统及瞬时回避测试系统 ,给出了在晨光号加速器和WT5”BZ]Measurements of transient effects of electronic devices and circuits are investigated Mechanisms of photocurrent in transistors are analyzed, and latch up and upset in CMOS circuits are studied Test on some types of transistors and CMOS circuits are carried out And some of the results are presented [WT5HZ]

关 键 词：电子器件 剂量率效应 电子电路 电路测试 

分 类 号：TN606[电子电信—电路与系统] TN707