外腔法压窄半导体激光器线宽的二阶理论  

The Second Order Theory on Linewidth Reduction of Semiconductor Lasers by External Cavities

作　　者：柴燕杰 张汉一 周炳琨 吴群 

机构地区：[1]电子工程系

出　　处：《清华大学学报（自然科学版）》1990年第1期85-88,共4页Journal of Tsinghua University(Science and Technology)

摘　　要：对耦合于长无源外腔的半导体激光器的线宽行为进行了二阶理论分析，首次得到了 外腔半导体激光器的线宽压窄率随外腔长的增加而出现饱和的结论。并给出了饱和因子 的表述式。The linewidth performance of semiconductor lasers coupled to long passive external cavities is theoretically studied with second order approximation. It is found for the first time that linewidth reduction will saturate at long external cavity length. An expression of the saturate factor is also given formularily.

关 键 词：半导体激光器 线宽 外腔法 二阶理论 

分 类 号：TN248.4[电子电信—物理电子学]