室温下单晶硅显微压痕表面位错组态的TEM观察  

TEM observations of the dislocations from micro-indentation surface in single crystalline silicon at room temperature

作　　者：张琼[1] 蔡传荣 周海芳 

机构地区：[1]福州大学材料科学与工程学院,福建福州350002 [2]福州大学测试中心,福建福州350002 [3]福州大学电子科学与应用物理系,福建福州350002

出　　处：《福州大学学报（自然科学版）》2001年第2期55-57,共3页Journal of Fuzhou University(Natural Science Edition)

基　　金：福建省教委基金!资助项目 (JA99132 )

摘　　要：采用透射电镜 (TEM )定位观察了室温单晶硅显微压痕表面的微观信息 .发现了为数不少的位错圈、堆垛层错、扩展位错及压杆位错、位错偶等多种组态 .尽管产生的原因各异 ,但均为最终的低能稳定组态 .位错的存在和运动表明常温下单晶硅的压痕缺口附近产生塑性变形 .The micro-information from micro-indentation in the surface of single crystalline silicon is analysed through transmission electron microscope at room temperature. The result shows various configurations of dislocations,such as helical dislocation,stacking fault,strait-rod dislocation,extended dislocation, dislocation dipoles which are stable and dislocation structures with the lower energy. The dislocation existence and dislocation motion are possibly concerned with plastic deformation along the indentation ridge area at room temperature.

关 键 词：单晶硅 塑性变形 显微压痕 微观位错组态 透射电镜 位错圈 扩展位错 压杆位错 

分 类 号：O613.72[理学—无机化学] O772[理学—化学]