半导体微腔激光器瞬态特性的分析  

Analysis for the Transient Property of Semiconductor Microcavity Laser

作　　者：潘炜[1] 张晓霞[1] 罗斌[1] 吕鸿昌[1] 陈建国[1] 

机构地区：[1]西南交通大学计算机与通信工程学院,四川成都610031

出　　处：《光电工程》2001年第2期39-42,共4页Opto-Electronic Engineering

基　　金：铁道部科技发展计划资助项目! (97x2 1)

摘　　要：建立了反映半导体微腔激光器特性的模型。借助计算机手段 ,运用 Matlab软件直接给出了半导体微腔激光器瞬态响应的仿真结果及载流子密度和光子密度的相图。分析了自发辐射因子、注入电流和腔长对微腔激光器的激射阈值、延迟时间、驰豫振荡频率和光输出等参量的影响。该模型及有关结论为半导体微腔激光器的工艺制作 ,改善的高频调制特性和优化器件结构提供了理论依据。A model for reflecting the property of semiconductor microcavity laser is set up. The simulation results of the transient response, the phase diagram of carrier density and photon density are directly given by means of computer and Matlab software. The influence of spontaneous emission factor, injection current and microcavity length on lasing threshold, delay time, relaxation oscillation frequency and light output of microcavity laser are analysed. The model and the related conclusion provide the theoretical basis for the manufacturing technology of semiconductor microcavity laser, improvement of high frequency modulation property and optimization of device constitution.

关 键 词：半导体激光器 微腔激光器 瞬态特性 

分 类 号：TN248.4[电子电信—物理电子学]