掺钽的二氧化钛电容-压敏陶瓷电学性能研究  

Investigation of TiO_2.Ta_2O_5 Capacitor-varistor Ceramics

作　　者：李长鹏[1] 王矜奉[1] 陈洪存[1] 苏文斌[1] 钟维烈[1] 张沛霖[1] 

机构地区：[1]山东大学物理系,济南250100

出　　处：《压电与声光》2001年第2期113-115,123,共4页Piezoelectrics & Acoustooptics

基　　金：山东省自然科学基金资助项目

摘　　要：通过对样品 I- V特性和势垒高度等参数的测定 ,研究了钽对二氧化钛压敏电阻电学性能的影响。研究中发现掺入的 x(Ta2 O5 ) 0 .2 5 %为的样品显示出最低的反转电压 (Eb=6 V/m m)、最高的非线性常数 (α=8.8)以及最高的相对介电常数 (εr=6 .2× 10 4)这与该样品最高且最窄的晶界缺陷势垒相一致。样品的电学性能变化可用Ta5 +对 Ti4+的掺杂取代和该取代存在的饱和值来解释。相应的缺陷势垒模型用来解释势垒的形成。By measuring the properties of I-V and the borndary defect barriers,the electrical properties of TiO 2 based ceramics with various Ta 2O 5 dopants were investigatedIt was found that an optimal doping composition of 9975%TiO 2·025%Ta 2O 5 shows low breakdown voltage of 6 V/mmhigh nonlinear constant of 88 and ultrahigh electrical permittivity of 62×104(measured at l kHz),which is consistent with the highest and narrowest boundary barriers of the sampleThe characteristics of the ceramics can be explained by the effect and the maximum of the substitution of Ta 5+ for Ti 4+In order to illustrate the grain boundary barriers formation in TiO 2·Ta 2O 5 varistors,an interface defect barrier model was also introduced

关 键 词：压敏材料 二氧化钛 电学性能 掺钽 

分 类 号：TM282[一般工业技术—材料科学与工程]