高温氢气氛对SIMOX/SOI结构的损伤  

SIMOX/SOI Structure Damaged by Hydrogen at High Temperature

作　　者：李金华 林成鲁[2] 林梓鑫[2] 薛才广 邹世昌[2] 

机构地区：[1]常州半导体厂,江苏213001 [2]中国科学院上海冶金研究所离子束开放实验室,上海200050

出　　处：《Journal of Semiconductors》1993年第1期56-59,2,共5页半导体学报（英文版）

摘　　要：SIMOX/SOI样品在1000～1200℃的高温H_2气氛中作不同时间(5—30分)的烘烤。结果,SOI结构受到了不同程度的损伤。测试结果表明,这种损伤包括:高温H_2使SOI结构顶层Si中缺陷的扩展,高温H_2使埋层SiO_2分解和分解后的O_2(或H_2O)在外释过程中造成表层单晶Si的损伤。高温H_2对SIMOX结构的这种损伤对SIMOX/SOI的外延是不利的。SIMOX/SOI samples were heated with different time in hydrogen ambient at temperaturesranging from 1000℃ to 1200℃. All of samples were damaged. There are three types ofdamage: The dislocations and defects in the superficial silicon layer were spreaded; The buriedSiO_2 of SIMOX was decomposed; The released O_2 or H_2O made the superficial layer todamage further due to diffusion out through the surface layer. So, it is important to selectshorter time and lower temperature in H_2 ambient for epitaxy of SIMOX/SOI structure.

关 键 词：SOI制备 高温氢气 结构 损伤 

分 类 号：TN304.055[电子电信—物理电子学]