薄膜厚度的多探头计算机实时测控系统  

Real Time In-situ Monitoring and Control of Thin Film Growth with Multi-quartz-probe

作　　者：范智勇[1] 陈殿勇[1] 莫晓亮[1] 陈国荣[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《真空科学与技术》2001年第2期166-169,共4页Vacuum Science and Technology

摘　　要：阐述了用声阻抗法实时监测薄膜沉积的原理 ,介绍了一种使用个人计算机的实时测控系统。它可在真空镀膜的过程中对膜厚进行实时测量和控制 ,允许使用多个石英晶体探头 ,以适应多源共蒸发真空镀膜的需要。监测的过程和结果可以存储下来进行分析。为优化镀膜工艺提供了很大的方便。A computerized system has been developed for real time,in situ monitoring and control of thin film growth by deposition.The system can monitor in situ the film thickness because quartz probe is sensitive to properties of the film,such as its acoustic impedance,its density and its thickness etc.Multiple quartz probes can be used for multi source co evaporation.Data accumulated in film growth can be automatically saved for further analysis and for optimization of film growth techniques.

关 键 词：计算机 薄膜厚度 多探头 声阻抗法 实时测控系统 真空镀膜 石英晶体荡法 

分 类 号：O484.5[理学—固体物理] TP399[理学—物理]