Si(111)-(3^(1/2)×3^(1/2))R30°-Ga表面原子结构  

Refined Atomic Structure of Si(111)-(3^(1/2)×3^(1/2))R30°-Ga Surface

作　　者：邓丙成[1] 徐耕[2] 陈文华 何永健 谢茂海 唐叔贤[3] 

机构地区：[1]华南建设学院西院基础部,广州510405 [2]中山大学物理系,广州510275 [3]香港大学物理系

出　　处：《Journal of Semiconductors》2001年第4期427-430,共4页半导体学报（英文版）

摘　　要：利用自动张量低能电子衍射 (ATL EED)定量地研究 Si(111) - (3× 3) R30°- Ga重构表面的原子结构 .证实了 Ga原子吸附在 T4位即第二层 Si原子所对的空位上 ,同时给出了表面最顶层 7个原子层的详细坐标 .可靠性因子 RVHT=0 .143表明理论计算和实验符合得非常好 .Refined atomic geometry of the Si(111)-(3×3)R30°-Ga surface has been obtained by the quantitative analysis of the intensity-energy spectra obtained from the measurement of a total of 16 symmetry-inequivalent beams by the method of low-energy electron diffraction in the energy range of 30—360eV.Ga atom is located on the hollow site above the second-layer Si atom,namely T 4 hollow site,but the distance between Ga adatom and the first Si layer is 0 144nm.Detailed atomic coordinates for atoms in the first 7 layers of the best-fit structure are given.A good level correspondence between the calculated intensities and the experimental ones has been reached with an average Van Hove-Tong R-factor of 0 143.

关 键 词：表面 原子结构 硅 电子衍射 重构 半导体 

分 类 号：TN301[电子电信—物理电子学]