集成MOS力敏运放压力传感器  

Integrated Pressure Sensor with Stress-Sensitive MOS Operational Amplifier

作　　者：岳瑞峰[1] 刘理天[1] 李志坚[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《Journal of Semiconductors》2001年第4期500-502,共3页半导体学报（英文版）

摘　　要：设计并制作出一种新型集成压力传感器——集成 MOS力敏运放压力传感器 .它将运算放大器中的一对PMOS差分输入管集中设置在 N型 (10 0 ) Si膜片上的最大应力区 ,并使它们的沟道方向相互垂直 ,运放中其它元件全部集中设置在厚体硅上的低应力区 .在压力作用下 ,输入级 MOS管沟道中载流子迁移率发生变化 ,运算放大器以其为输入信号而产生力敏输出 .这种压力传感器具有很高的压力响应灵敏度 ,可望在诸多领域有广泛应用 .A new type of integrated pressure sensor with stress-sensitive MOS operational amplifier has been designed and fabricated.Differential input pair of the MOS operational amplifier is located in the maximum stress region of N-type (100)-oriented silicon membrane,whose channels are perpendicular to each other, while other parts of the amplifier are designed on the low stress region of the bulk part of a chip.When pressure is in creased,the change in mobility of carries in the channel acts as the input signals of amplifier, thus leading to the pressure-related output.This sensor is of very high sensitivity and expected to be widely applied in many fields.[KH7/8D]

关 键 词：集成压力传感器 力敏运算放大器 压阻效应 

分 类 号：TP212.1[自动化与计算机技术—检测技术与自动化装置]