陷阱浓度对ZnS:Mn薄膜电致发光临界浓度和亮度的影响  

Influence fo Trap Concentration on Critical Concentration and Brightness of ZnS:Mn Thin Film Electroluminescence

作　　者：于光辉[1] 王永生[1] 何大伟[1] 徐征[1] 刘宏利[1] 徐叙 

机构地区：[1]北方交通大学光电子技术研究所,北京100044

出　　处：《光电子．激光》2001年第4期337-339,共3页Journal of Optoelectronics·Laser

基　　金：国家"八六三"计划资助项目! (863 -715 -0 0 82 );国家自然科学基金!资助项目 (199740 0 2 )

摘　　要：本文计算了陷阱浓度对 Zn S:Mn薄膜电致发光 Mn中心临界浓度的影响 ,在不同的陷阱浓度下 ,计算了发光亮度随发光中心浓度的变化。计算结果表明 ,降低陷阱的浓度可以显著地提高临界浓度 ,并且发光亮度也随之增大。In this article the influence of trap concentration on the critical concentration of Mn centers in ZnS:Mn thin film electroluminescence and the change of brightness with the concetration of Mn centers under different trap concentrations have been calculated.The results indicate that by reducing the trap concentraiton the critical concentration can be increased notably and the brightness also can be increased.

关 键 词：ZnS:Mn簿膜 电致发光 陷阱浓度 临界浓度 亮度 

分 类 号：TN304.055[电子电信—物理电子学] O484.4[理学—固体物理]