近空间升华法制备CdTe薄膜  

Study on Preparation and Structure of CdTe Films

作　　者：蔡伟[1] 张静全[1] 郑家贵[1] 黎兵[1] 蔡亚平[1] 武莉莉[1] 邵烨[1] 冯良桓[1] 

机构地区：[1]四川大学材料科学系,四川成都610064

出　　处：《半导体光电》2001年第2期121-123,127,共4页Semiconductor Optoelectronics

基　　金：国家"九五"科技攻关资助项目!(96 -A7- 0 3 - 0 2- 0 3);国家自然科学基金资助项目!(5 96 72 0 36 )

摘　　要：研究了衬底材料和基片温度对膜微结构的影响。衬底温度在 4 0 0℃以上薄膜结晶状况较为完整。在结晶状况较好的CdS薄膜上生长的CdTe薄膜晶粒较大 ,尺寸均匀。在CdTe膜面涂敷CdCl2 甲醇溶液 。CdTe films are prepared by closed space sublimation technology.Film crystalline dependence on substrate materials and substrate temperature is studied.It is found that films show higher crystallinity at substrate temperature over 400 ℃.And the CdTe films deposited on CdS films with higher crystallinity has bigger crystallite and higher uniformity.Treatment with CdCl 2 methanol solution promotes the crystallite growth of CdTe films during annealing.

关 键 词：CDTE薄膜 近空间升华法 太阳电池 

分 类 号：TM914.4[电气工程—电力电子与电力传动]