铟(Ⅲ)-芦丁体系的电化学吸附伏安法  

Adsorptive Voltammetry of the Indium(Ⅲ)-Rutin System

作　　者：赵敬中[1] 杨晴[2] 张立云[1] 孙德志[1] 

机构地区：[1]聊城师范学院化学系,聊城252059 [2]浙江大学玉泉化工学院97制药工程

出　　处：《聊城师院学报（自然科学版）》2000年第3期45-47,共3页Journal of Liaocheng Teachers University(Natural Science Edition)

摘　　要：对铟（Ⅲ）－芦丁络合物在悬汞电极上的吸附伏安法作了研究．在 ＨＡｃ－ＮａＡｃ缓冲溶液中，用单扫吸附伏安法可获得高灵敏度的铟（Ⅲ）－芦丁络合物的吸附还原峰．用１．５阶微分吸附伏安法测定铟，检测下限达５×１０－１１ｍｏｌ／Ｌ，线性范围是１×１０－１０～１×１０－７ｍｏｌ／Ｌ．用此法成功地测定了粮食中的痕量铟，并确定了电极过程．A Sensitive voltammetric edtermination of trace indium is described, based on the adsorption characteristics of indium(Ⅲ ) with rutin at a hanging mercurydrop electrode(HMDE). The experimental results show that the detection limit and the linear rangae of 1. 5th order differential linear sweep voltammetry in HAc-NaAc-rutin system are 5 × 10-11 and 1 × 10-10× 10-7 mol/L,respectively. The method has been applied to the determination of indium in foods. The electrochemical behaviour of the indium complex at the HMDE was also investigated.

关 键 词：铟 芦丁 吸附伏安法 电化学 

分 类 号：O614.372[理学—无机化学] O657.1[理学—化学]