应用数学模型指导负阻Gunn器件的电路设计  

Applying the mathematical model to the design of the circuit of negative resistance Gunn device

作　　者：王英华[1] 赵建顺[1] 

机构地区：[1]济南大学信息与控制工程系,山东济南250022

出　　处：《山东轻工业学院学报（自然科学版）》2001年第2期12-17,共6页Journal of Shandong Polytechnic University

摘　　要：根据Gunn器件GaAs材料的半导体物理特性 ,由载流子所满足的Poisson方程和电流连续性方程入手 ,分析了器件内部场分布特性 ,并采用数值法获得了Gunn器件的基波大信号特性。将描述Gunn器件谐波特性的数学模型应用到电路设计 ,不需要作进一步参数修正便可得到与实际相符的结果。Based on the semiconductor physical behavior of GaAs Gunn device,utilizing Poisson equation and current continuous equation,the characteristic of the electromagnetic field distribution within the device is analyzed.Gunn's large signal behavior of the fundamental wave is obtained with numerical method.The mathematical model of the harmonic wave characteristic of the device is applied to the design of the circuit and the accurate results can be obtained without further parameter correction.

关 键 词：数学模型 振荡器 负阻Gunn器件 电路设计 

分 类 号：TN75[电子电信—电路与系统]