超高速单电源GaAs判决再生电路  

A Super High-speed GaAs Decision Circuit with Single Power Supply

作　　者：詹琰[1] 王永生[1] 赵建龙[1] 夏冠群[1] 孙晓玮 范恒[1] 

机构地区：[1]中国科学院上海冶金研究所,200050

出　　处：《固体电子学研究与进展》2001年第2期133-138,共6页Research & Progress of SSE

基　　金："九五"国家重点攻关专题! (编号为 97- 773- 0 1- 0 1- 0 1)

摘　　要：设计并模拟分析了光纤通信用超高速单电源 Ga As判决再生电路 ,采用非掺 SI Ga As衬底直接离子注入、1μm耗尽型 Ga As MESFET、平面电路工艺研制出单片 Ga As判决再生电路。实验测试结果表明 ,该电路可对输入信号进行正确的“0”、“1”判决 ,并经时钟抽样后 ,输出正确的数字信号 ,传输速率可达 2 .8Gbit/s,可用于覆盖 2 .A super high speed GaAs decision circuit with single power supply applied to optical fiber communication has been designed and simulated. The monolithic GaAs decision circuit with 1 μm depletion mode GaAs MESFET’s is fabricated by direction implantation on no doping SI GaAs substrate and planar circuit procedure. It is proved by test that the circuit can deal with input signal rightly and produce correct digital output signal after being sampled by clock. The circuit can operate at 2.8 Gbit/s, so it can be applied to 2.5 Gbit/s optical fiber communication.

关 键 词：光纤通信 电源 砷化镓 判决再生电路 金属-半导体势垒场效应晶体管 

分 类 号：TN929.11[电子电信—通信与信息系统]