用椭圆偏振测量法分析碲镉汞的组分及其均匀性  

Analysis on Composition and Uniformity of HgCdTe by Ellipsometry

作　　者：黄仕华[1] 蔡毅[2] 钱晓凡[1] 陈永安[1] 

机构地区：[1]昆明理工大学理学院,云南昆明650051 [2]昆明物理研究所,云南昆明650223

出　　处：《半导体光电》2001年第3期224-226,共3页Semiconductor Optoelectronics

基　　金：原云南工业大学校立基金资助项目! (980 10 )

摘　　要：简略介绍了椭偏仪的测量原理和测量装置。分析了Hg1-xCdxTe(MCT)的组分与椭偏仪的参数Δ和 ψ之间的关系 ,结果发现碲镉汞的组分x主要与椭偏仪的参数 ψ有关 ,而且x与 ψ的经验关系为 ψ =14.84 - 10 .2 2x。最后用椭圆偏振测量的方法分析了碲镉汞的横向和纵向组分均匀性。该方法具有非破坏性、有效、快捷的特点。Principle of ellipsometric measurement is presented and ellipsometry is briefly described, followed by analysis on the relationship between the composition of HgCdTe and the ellipsometric parameters ( and Δ). It is found that the ellipsometric parameter is chiefly correlated with composition x, and x has an approximately linear relationship to . Finally, the transverse and longitudinal compositional uniformity of HgCdTe is analyzed by ellipsometric measurement which is a nondestructive, effective and rapid analytic method.

关 键 词：椭圆偏振测量 碲镉汞 组分均匀性 半导体材料 

分 类 号：TN304.26[电子电信—物理电子学]