应用低能正电子衍射对Si(111)-(2×1)表面结构的分析  

Analysis of Si(111)-(2×1) Surface Structure with Low-Energy Positron Diffraction

作　　者：谭忠民[1] 邓丙成[2] 徐耕[3] 

机构地区：[1]广州大学土木工程学院,广东广州510405 [2]广州大学理学院,广东广州510405 [3]中山大学物理系,广东广州510275

出　　处：《洛阳工学院学报》2001年第2期83-85,共3页Journal of Luoyang Institute of Technology

摘　　要：对Si(111) (2× 1)表面 7个非等价垂直入射衍射束的自动张量低能正电子衍射强度的分析的结果表明 ,该表面偏向于改进的π键链模型 ,但得到的可靠性因子不如其它化合物半导体表面结构分析时小 ,本文对其可能的原因进行了较详细的分析。The intensities of 7 nonequivalent beams of normally incident positron diffracted from the Si(111) (2×1) surface has been analyzed by automatic tensor low energy positron diffraction (ATLEPD).The result is favorable of modified π bonded chain model though R factors are not as good as those of compound semiconductors.Possible reasons have been discussed thoroughly in the paper.

关 键 词：低能正电子衍射 表面分析 表面结构 晶体 

分 类 号：O722[理学—晶体学]