A lGaInP/GaInP SCH S-SQW激光器光束质量的矢量矩分析  

The Optical Beam Quality Analysis of A lGaInP/GaInP SCH S-SQW Laser Using Vectorial Moment Theory

作　　者：吕章德[1,2] 周国泉[1,3] 王绍民[1] 

机构地区：[1]浙江大学西溪校区物理系,浙江杭州310028 [2]绍兴文理学院物理系,浙江绍兴312000 [3]浙江林学院信息系,浙江临安311300

出　　处：《光电子．激光》2001年第6期549-551,共3页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目 (19974038)

摘　　要：本文应用非傍轴矢量矩理论 ,分析了 6 70 nm Al Ga In P/Ga In P分别限制应变单量子阱 (SCH S-SQW)激光器在弱激射和正常激射条件下的垂直于结面方向的光束质量因子 M2⊥ 。分析结果表明 ,在两种情况下 ,M2⊥ 均小于 1,而且前者具有更小的 M2⊥ 。WT5”BZ]:On the basis of the nonparaxial beam vectorial moment theory,the vertical beam quality factors M 2 ⊥ (parpendicular to junction) of the conventional 670 nm AlGaInP/GaInP separate confinement heterostrcture strained single quantum well SCH (S SQW) laser under weak lasing and normal lasing conditions are studied respectively.The results show that M 2 ⊥ of weak lasing beam and normal lasing beam are both smaller than unity,moreover,the former is far smaller than the latter. [WT5”HZ]

关 键 词：半导体激光器 应变单量子阱 光束质量 S-SQW 矢量矩分析 

分 类 号：TN248.4[电子电信—物理电子学]