FeSiAl合金薄膜电感的研制与研究  

Development of Thin Fe-Si-Al Alloy Film Inductor

作　　者：赵海燕[1] 虞维扬[1] 姚中[1] 

机构地区：[1]上海钢铁研究所,上海200940

出　　处：《金属功能材料》2001年第3期17-21,共5页Metallic Functional Materials

摘　　要：本文采用DC直流溅射的方法研制了FeSiAl合金薄膜电感 ,并探讨了输入功率、靶与基板间距离等溅射成形条件及成膜速率的关系及其对薄膜电感性能的影响 ,同时还分析了不同状态下的FeSiAl合金薄膜的结构 ,讨论了产生DO3Thin Fe Si Al film inductors were developed by DC sputtered method The relationship between the sputtering conditions such as input power and the gap between the target and substrate and the deposition rate and its influence on the performance of film inductors were studied The structure of Fe Si Al alloy films in the different state and the best process produced the DO 3 ordered structure are discussed and analyzed

关 键 词：FeSiAl合金 薄膜电感 DO3超结构 研制 

分 类 号：TB383[一般工业技术—材料科学与工程]