CuZnAl记忆元件的“台阶”效应  

Plateau effect of CuZnAl memory elements

作　　者：谭树松[1] 彭坤[1] 曾欲晓[1] 谭立新[1] 桂嘉年[2] 王仁卉[2] 

机构地区：[1]中南大学材料系,长沙410083 [2]武汉大学物理系,武汉430072

出　　处：《中国有色金属学报》2001年第3期356-361,共6页The Chinese Journal of Nonferrous Metals

基　　金：国家自然科学基金资助项目 ( 5 97710 3 0 )

摘　　要：研究了CuZnAl形状记忆合金在压应力作用下进行不完全相变热循环或在两相区时效时相变曲线出现的“台阶”现象。结果表明 :外加载荷或延长两相区时效时间 ,均能促进“台阶”效应的发展。记忆元件一旦出现“台阶”效应 ,可在高于Af 以上的适当温度保温一定时间来消除。“台阶”效应可用马氏体时效使马氏体稳定化 ,引起逆转变温度升高 ,及母相时效使母相有序度略有提高 。A plateau in the transformation curves was investigated for CuZnAl shape memory alloys which were aged in the two phase region or undergone incomplete heat cycles. It is showed that the increasing of load or aging time all accelerate the appearance of the plateau, and the plateau will be eliminated by complete transformation heat cycle. These plateaus are caused by the stabilized martensite of the sample which is aged in the two phase region and undergoes structural change. [

关 键 词：“台阶”效应 马氏体 稳定化 有序度 CUZNAL形状记忆合金 

分 类 号：TG139.6[一般工业技术—材料科学与工程]