掺Si对Bi-Pb-Sr-Ca-Cu-O体材料的超导电性和微结构的影响  

Influence of Si-doping on the Superconducting Properties and Microstructure in Bi-Pb-Sr-Ca-Cu-O Bulk Materials

作　　者：曾令文[1] 李永静[1] 千正男[1] 吴代鸣[1] 

机构地区：[1]吉林大学物理系

出　　处：《吉林大学自然科学学报》1991年第1期55-58,共4页Acta Scientiarum Naturalium Universitatis Jilinensis

摘　　要：自从Maeda等人发现Bi-Sr-Ca-Cu-O材料的超导电性以来,Bi系体材料和薄膜材料的研究已取得了重大的进展。为了实际应用的需要,直接在Si或SiO₂衬底上制备Bi-Sr-Ca-Cu-O膜是很必要的,因此需要知道Si对Bi系材料超导电性的影响。本文报道了掺Si对Bi-Pb-Sr-Ca-Cu-O体材料的超导电性的影响的初步研究结果。The effect of the Si-doping on the superconducting properties and microstructure of Bi-Pb-Sr-Ca-Cu-O bulk materials has been investigated. It has been found that the superconducting transition temperature showed no considerable change in Si-doped Bi-Pb-Sr-Ca-Cu-O materials, while the critical current density was fCund to be significantly improved. The microstructures of both Si-doped and Sifree Bi-Pb-Sr-Ca-Cu-O materials were characterized by bar-shape grains and indeterminate shape grains, but the bar-shape grains in the Si-doped materials were much more and longer than those in the Si-free materials. The microstructural change can be considered to be one of the possible reasons to lead to the improvment of the critical current density in the Si-doped Bi-Pb-Sr-Ca-Cu-O materials.

关 键 词：超导电性 微结构 BIPBSRCACUO SI 

分 类 号：TM262[一般工业技术—材料科学与工程]