氯化钛白氧化反应器壁结疤机理  

Sacling Mechanism on the Oxidation Reactor Wall in TiO_2 Synthesis with Chloride Process

作　　者：姜海波[1] 李春忠[1] 吕志敏[1] 丛德滋[1] 朱以华[1] 

机构地区：[1]超细材料制备与应用教育部重点实验室华东理工大学技术化学物理研究所,上海200237

出　　处：《华东理工大学学报（自然科学版）》2001年第2期152-156,共5页Journal of East China University of Science and Technology

基　　金：国家 95攻关项目 !(96-5 5 4-0 2 ) ;上海市科技启明星基金!(0 0 QE14 0 45 ) ;国家自然科学基金资助项目 1(2 963 60 10 )

摘　　要：利用预燃烧直管反应器 ,研究氯化钛白氧化反应器内的结疤机理。氧化反应器内结疤主要起因于氧化过程生成的超细 Ti O2 颗粒在反应器壁的沉积和烧结 ,反应器壁面温度越高结疤速率越快。当反应器壁面温度较低时 ,靠近壁面为 Ti O2 颗粒堆结层 ,而靠气相主体的疤层发生了部分烧结。反应温度升高、反应物浓度增大时 ,结疤速率增大 ;The scaling mechanism on the tubular reactor wall in TiO 2 synthesis was investigated. The formation of wall scale is mostly due to the deposition and the sintering of TiO 2 particle formed in the gas phase reaction of TiCl 4 with O 2. The higher the temperature of the reactor wall is, the faster scaling rate is. At low wall temperature, the particle packed layer is formed by powder deposition, and the scale is partly sintered at higher temperature. The formation rate increases with increasing the reaction temperature and the reactant concentration, but is affected little by the surface status of the reactor.

关 键 词：氯化法 钛白粉 结疤 氧化反应器 

分 类 号：TQ621.12[化学工程—精细化工]