平板型高电位胶粒双电层的相互作用  

Double Layer Interaction between Parallel Plates with High Surface Potential

作　　者：罗根祥[1] 金军[1] 王好平[1] 

机构地区：[1]抚顺石油学院材料科学系,抚顺113001

出　　处：《物理化学学报》2001年第6期484-487,共4页Acta Physico-Chimica Sinica

摘　　要：利用线性迭加法 ,提出了平行平板型高电位颗粒之间的弱相互作用的近似表达式 .结合文献 [3]给出的强相互作用表达式 ,对高电位平行平板型颗粒的相互作用给出了完整的描述 ,和精确数值解吻合相当好 .强弱相互作用的接合点在κ h=4,误差在接合点处最大 ,～ 10％ .根据 Derjaguin法和改进的 Derjaguin法 ,求出了高电位球颗粒在恒电位条件下的相互作用能 .A simple method of calculating the interaction force and energy per unit area between two dissimilar plates with high potentials at constant surface potentials has been presented in Ref. [3], in which strong interaction of plates with high potentials was discussed. Using linear superposition, approximate expressions have been derived for weak repulsive interaction energy and force between parallel plates with high surface potential. Combining the results of Ref [3], the double layer repulsive interaction between parallel plates with high surface potential has been integrally generalized. Juncture of strong and weak interaction is at kappah = 4, and the relative error is largest at this point, similar to 10%. Good agreement of the present results with the exact numerical results calculated by the computer is found over a wider range of the plate separation. Using Dejaguin's method and the improved Derjaguin's method the expressions of the interaction free energy between two dissimilar spheres with high surface potentials have also been derived. However, the range of application of the equations of interaction energy for the spheres are narrower than that of the plates.

关 键 词：平板型胶体颗粒 高表面电位 Derjaguin法 弱相互作用 

分 类 号：O648[理学—物理化学]