三段式F-P半导体激光器的光谱特性分析  

Analysis of the output spectrum of three-section Fabry-Perot semiconductor lasers

作　　者：王甦[1] 陈建国[1] 李大义[2] 

机构地区：[1]西南技术物理研究所,成都610041 [2]四川大学光电系,成都610064

出　　处：《激光技术》2001年第3期174-177,共4页Laser Technology

摘　　要：通过微加工法可以在F P半导体激光器中引入具有反射功能的缺欠点或面来改进激光器的光谱特性。利用射线法 ,推导了含有两个缺欠点的微加工获得的F P半导体激光器的输出谱表达式 ,并根据平均载流子密度近似 (MCA)计算出名义阈值载流子密度Nth与实际载流子密度N之差ΔN ,从而对模式抑制比 (MSR)Micro machined defects can be introduced into a semiconductor laser to improve spectral characteristics of the F P laser. Based on ray trace method, an expression of the output spectrum from a micro machined F P semiconductor laser including two defects has been deduced. With the aid of the expression , the difference Δ N between the nominal threshold carrier density N th and actual carrier density N of the laser can be determined, and the side mode suppression can be specified.

关 键 词：三段式F-P半导体激光器 输出光谱 模式抑制比 光谱特性分析 

分 类 号：TN248.4[电子电信—物理电子学]