半导体微腔激光器瞬态响应及调制特性分析  

Analysis of modulation characteristics and transient response of semiconductor micro-cavity lasers

作　　者：张晓霞[1] 潘炜[1] 罗斌[1] 吕鸿昌[1] 陈建国[2] 

机构地区：[1]西南交通大学计算机与通信工程学院,成都610031 [2]四川大学光电系,成都610064

出　　处：《激光技术》2001年第3期221-224,共4页Laser Technology

基　　金：铁道部科技发展计划;四川省青年科技基金会资助

摘　　要：针对半导体微腔激光器的结构特点 ,考虑到腔量子电动力学中自发辐射增强效应 ,采用传统速率方程的表示形式 ,建立了微腔激光器的速率方程 ,着重讨论了微腔激光器的瞬态响应及调制特性 ,给出了其动态特性的仿真结果 ,分析了自发辐射因子、注入电流和腔长对微腔激光器的激射阈值、延迟时间、驰豫振荡频率和光输出等参量的影响 。Based on the structural property of semiconductor and the enhanced effect of spontaneous emission in cavity quantum electron dynamics, a simple rate equation is derived for micro-cavity lasers. Transient response and dynamic modulation characteristics of micro-cavity lasers are discussed. The dependence of threshold, turn-on delay and relaxation oscillation frequency on spontaneous emission factor, inject current and the length of the cavity is analyzed. The results construct the theoretical basis to improve the high frequency modulation characteristics of micro-cavity lasers and to optimize their structures.

关 键 词：半导体微腔激光器 瞬态响应 调制特性 

分 类 号：TN248.4[电子电信—物理电子学]