Mach-Zehnder型GaAs/GaAlAs行波光调制器的微波特性分析  

Microwave Characteristics Analysis of Mach-Zehnder GaAs GaAs/GaAlAs Traveling-Wave Optical Modulators

作　　者：赵旭[1] 杨建义[1] 王明华[1] 

机构地区：[1]浙江大学信息与电子工程学系,杭州310027

出　　处：《微波学报》2000年第5期522-526,共5页Journal of Microwaves

摘　　要：提出利用 n+重掺杂层的慢波效应研制 Mach- Zehnder干涉型行波光调制器 ,并通过在相对介电常数 εr中引入与电导率有关的虚部 σ/ ωε0 ,拓展了直线法对介质损耗的计算。文中指出在这种共面微带线中奇模和偶模的不同作用 ,重点分析和研究了器件行波电极的微波特性 ,从而设计出理论上可达 4 6GHz带宽的高速光波导调制器。A new design of Mach-Zehnder traveling-wave interferometer modulator based on the slow-wave effect of the n+ heavily doped epitaxial layer are proposed in this paper.The influences on the microwave characteristics of the modulator structural parameters are analyzed in details by means of the method of line.By introducing jσ/ωε 0 into the permittivity of semiconductor,the areas of applying MoL are extended.The different functions of the odd and even symmetric modes in coplanar microstrips are pointed out, then the influences on the microwave characteristics of the modulator structural parameters are analyzed in detail.Based on the analytical results,a structure of the traveling-wave M-Z optical modulator with 46GHz theoetical bandwidth is designed.

关 键 词：砷化镓 M-Z型调制器 行波调制器 微波特性分析 

分 类 号：TN761[电子电信—电路与系统]