外腔半导体激光器中激光二极管端面反射率的谱特性分析  

Reflectivity spectral characteristics on diode facets of external-cavity semiconductor lasers

作　　者：潘炜[1] 张晓霞[1] 罗斌[1] 陈建国[2] 

机构地区：[1]西南交通大学计算机与通信工程学院,四川成都610031 [2]四川大学光电系,四川成都610064

出　　处：《光学技术》2001年第4期291-293,共3页Optical Technique

基　　金：铁道部科技发展计划和四川省科技基金资助项目

摘　　要：考虑到端面反射率与波长有关 ,且带宽有限的实验事实 ,以及增益谱随载流子密度变化的因素 ,着重分析了激光二极管 (L D)镀膜端面反射率带宽、极小波长位置参量对光栅外腔激光器 (ECL D)调谐范围的影响。分析表明 ,除了 L D镀膜端面剩余反射率值、外腔反馈效率等因素之外 ,增大反射率带宽、精确控制极小波长位置是进一步挖掘 ECL D调谐范围的有效措施。增大反射率带宽 ,可更有效地提高参考载流子密度 ,延伸长波长端调谐区域 ,抑制 F- P腔影响。在确定的条件下 ,优化后的极小波长位置对应于调谐范围的极大值。Carrier density in relation to peak wavelength of the gain profile and wavelength dependence and finite spectral width of reflectivity at AR coating facets has been taken into account to study the wavelength tuning range of the grating external cavity semiconductor lasers (ECLD) Analysis shows that the band width of reflectivity and the wavelength of minimum position at the coated facets are a key parameter to increase wavelength tuning range of ECLD, expect residual reflectivity numerical value, feedback efficiency of the external cavity They are used to increase the reference (upper bound) of the carrier density, to restrain Fabry Perot cavity influence and to extend long wavelength end From results of the analysis, the theoretic predications are in agreement with measured results

关 键 词：半导体激光器 外腔激光器 反射率谱 调谐范围 激光二极管 

分 类 号：TN248.4[电子电信—物理电子学]