用光电流谱研究多孔硅微腔的光电特性  

Absorption of Porous Silicon Microcavities via Photocurrent Measurement

作　　者：熊卫华[1] 熊祖洪[1] 陆昉[1] 

机构地区：[1]复旦大学应用表面物理国家重点实验室,上海200433

出　　处：《Journal of Semiconductors》2001年第9期1127-1130,共4页半导体学报（英文版）

基　　金：上海市科委资助项目~~

摘　　要：利用光电流谱对全硅基多孔硅微腔的吸收特性进行了研究 ,在光电流谱中观察到 λ1 =742 nm主峰 .同时也对多孔硅微腔的 PL 谱和单层多孔硅的光电流谱进行了测量 ,结合有效折射率方法和菲涅耳公式 ,对照 PL 谱和单层多孔硅的光电流谱 ,对常温下多孔硅微腔的光电流谱进行解释 .The absorption properties of porous silicon microcavities are studied via photocurrent measurement.In the photocurrent spectra,the main peak (λ 1=742nm) are observed.For comparison,the photoluminescence spectrum of porous silicon microcavities and the photocurrent spectrum of single layer porous silicon are also studied.Combining the effective refractive index model and Fresnel formula,and contrasting with PL spectrum and the photocurrent spectrum of single layer porous silicon,the explanation of the photocurrent spectra is given.

关 键 词：光电流谱 多孔硅微腔 PL谱 光电特性 

分 类 号：TN304.12[电子电信—物理电子学]