半导体微腔激光器中的自发辐射耦合增强效应  

Enhancing Effect of Spontaneous Emission in Semiconductor Microcavity Lasers

作　　者：潘炜[1] 张晓霞[1] 罗斌[1] 陈建国[2] 

机构地区：[1]西南交通大学计算机与通信工程学院,四川成都610031 [2]四川大学光电系,四川成都610064

出　　处：《激光与红外》2001年第4期216-218,224,共4页Laser & Infrared

基　　金：国家自然科学基金项目 ( 697770 19);铁道部科技发展计划基金 ( 97× 2 1)资助项目

摘　　要：针对半导体微腔激光器的结构特点 ,以及腔量子电动力学中自发辐射增强效应 ,采用光增益与载流子密度的对数关系 ,引入增益饱和项和非辐射复合项的贡献 ,指出即便是对于理想的封闭微腔 ,由于非辐射衰减速率的影响 ,光输出并不随泵浦线性变化。结合频谱和相图分析 ,给出了自发辐射耦合因子与微腔激光器的激射阈值、开关延迟时间、弛豫振荡频率和光输出等参量关系的仿真结果 ,这对于微腔激光器的理论研究和优化器件结构有所裨益。According to structural property of microcavity lasers and enhancing effect of spontaneous emission in cavity quantum electron dynamics,Based on changing the logarithrnic relation of gain of carrier density,the stimulated-emission rate includes a gain saturation as well as carrier recombination term.A simple rate equation formula is discussed the characteristics of microcavity lasers.It was found that the characteristic curve of a 'thresholdless'laser is strongly nonradiative depopulation-dependent.When the nonradiative depopulation is no zero,the light-current characteristic is not linearly even for an ideal closed microcavity.Described an analysis for transient response characteristics of microcavity lasers,We have got the relation of spontaneous emission factor on threshold,turn-on delay,relaxation oscillation frequency and output power.The result is benefit of semiconductor MQW lasers both in theoretical analysis and device structures.

关 键 词：半导体微腔激光器 自发辐射耦合因子 瞬态响应 增强效应 

分 类 号：TN248.4[电子电信—物理电子学]