掺Gd^(3+),Y^(3+)对PbWO_4低温热释光的影响  

INFLUENCE OF Gd^(3+) AND Y^(3+)-DOPING ON LOW TEMPERATURE THERMOLUMINESCENCE OF Pb WO_4

作　　者：刘波[1] 施朝淑[1] 周东方[2] 戚泽明[2] 胡关钦[3] 汤洪高[4] 

机构地区：[1]中国科学技术大学结构分析开放实验室,合肥230026 [2]中国科学技术大学国家同步辐射实验室,合肥230029 [3]中国科学院上海硅酸盐研究所,上海201800 [4]中国科学技术大学物理系,合肥230026

出　　处：《物理学报》2001年第8期1627-1631,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号 :5 9732 0 40和 197740 5 3)资助的课题&&

摘　　要：通过热释光方法研究了PbWO4(PWO) ,PWO :Y3+ ,PWO :Gd3+ 多晶粉末及PWO ,PWO :Y单晶的低温 (<30 0K)热释光现象 .多晶粉末中 ,掺杂Y3+ 或Gd3 + 都会大大降低甚至消除 2 0 0K附近的热释光峰 ,同时产生新的热释光峰 ,分别位于 12 5和 15 0K(掺Y掺Gd) .这表明掺三价离子除了起到电荷补偿作用以减少Pb3+ ,O- 浓度外 ,还可以产生新的陷阱能级 .对于PWO :Y单晶 ,掺杂Y3 + 可以消除 2 5 3K的热释光峰 ,即消除较深 (～ 0 .89eV)的陷阱 ,但PWO单晶中较浅的陷阱 (～ 0 .42eV)对应 130K热释光峰仍然存在 ,对此进行讨论 ,它最可能源于氧空位缺陷 .根据Pb3+ ,Gd3+ ,Y3 + 的电子库仑势不同 ,在PWO晶体中替代Pb2 + 后形成的电子陷阱深度有别 (EPb>EGd >EY) 。The influence of Gd 3+ and Y 3+ doping on the low temperature thermoluminescence (TL) of PbWO 4 (PWO) is investigated. In the case of polycrystal powder, the TL above 180K is eliminated by doping Y 3+ or Gd 3+ ions. Meanwhile, a new TL peak at lower temperature appeare. For the PWO single crystal there are two TL peaks at about 130 and 253K, but only one single peak at about 130K for PWO:Y crystals. The common effect of doping trivalent ions is to decrease or eliminate the TL above 180K and create a new TL peak at lower temperature. It indicates that the traps responsible for TL above 180K are due to the intrinsic defects which probably are Pb 3+ and O -. During the preparation of PWO, the evaporation of the PbO component is easier than that of WO 3, which will lead to the deficiency of PbO. The deficiency of O ions can be compensated by annealing in air while the deficiency of Pb is permanent. Therefore in the volume surrounding the Pb vacancy, there is a lack of positive charge. So the charge deficiency in the Pb\|sublattic can be most easily balanced by an increase of concentration of Pb 3+ and O -. Doping Gd 3+ or Y 3+ can decrease the concentration of Pb 3+ and O -. Gd 3+ or Y 3+ can also play a role of electron traps, which create new TL peaks at 150 and 125K, respectively. The trap depth of Gd 3+ and Y 3+ are 0.32 and 0.29eV, respectively. The difference between doping Gd 3+ and Y 3+ can be explained by the difference between their coulomb potentials.

关 键 词：掺杂 热释光 陷阱 钨酸铅 低温 

分 类 号：O734[理学—晶体学]