质子和1MeV中子在硅中能量沉积的模拟计算  

Simulation of Energy Deposition of Protons and 1MeV Neutrons in Silicon

作　　者：陈世彬[1] 张义门[1] 陈雨生[2] 黄流兴[2] 张玉明[1] 

机构地区：[1]西安电子科技大学微电子所,西安710071 [2]西北核技术研究所,西安710024

出　　处：《高能物理与核物理》2001年第4期365-370,共6页High Energy Physics and Nuclear Physics

基　　金：国防科技预研基金!资助&&

摘　　要：在现有中子截面数据和粒子与物质相互作用的理论基础上 ,编写了计算中子非电离能量损失 (NIEL)和电离能量损失 (IEL)程序 ,利用该程序和引进的TRIM95程序计算了 1MeV中子和质子在硅中IEL和NIEL的大小和分布等 ,并对计算结果进行了分析和比较 .Based on existing cross section data and general theories, a Monte Carlo computer program named NEUTRON for calculating non ionizing energy loss (NIEL) and ionizing energy loss (IEL) of neutrons in materials was written. The amount of IEL & NIEL and their distributions irradiation induced by 1MeV neutrons and protons in common semiconductor material Si were calculated with NEUTRON and introduced TRIM95, respectively. These results were analyzed and compared with literatures.

关 键 词：中子损伤 计算机模拟 蒙特卡罗 能量沉积 质子损伤 硅 半导体器件辐射 非电离能量损失(NIEL) 电离能量损失(IEL) 中子截面 粒子与物质相互作用 

分 类 号：O571[理学—粒子物理与原子核物理]