CdCl_2气相退火对CdS薄膜的影响  

Effects of CdCl_2 vapor treatment on CdS films

作　　者：武莉莉[1] 蔡伟[1] 张静全[1] 郑家贵[1] 蔡亚平[1] 黎兵[1] 邵烨[1] 冯良桓[1] 

机构地区：[1]四川大学材料科学系,四川成都610064

出　　处：《电源技术》2001年第B05期156-158,共3页Chinese Journal of Power Sources

基　　金：国家自然科学基金资助项目! (59672 0 36)

摘　　要：对CdS进行CdCl2 后处理是制备高效率CdS/CdTe多晶太阳能薄膜电池的关键步骤。研究了CdS薄膜的CdCl2 气相热处理 ,用XRD、UV/Vis表征热处理前后薄膜的结构、晶粒尺寸及禁带宽度的变化。对比研究了有无CdCl2 处理的CdS薄膜的结构差异。首次发现在 410℃ ,无CdCl2 热处理的CdS膜出现金属镉。随退火温度的增加和退火时间的延长 ,薄膜的立方结构被破坏。退火温度高于 410℃ ,CdS的 (111)衍射峰强度急剧减弱 ,470℃退火 1h后几乎完全消失。The post-deposition treatment for CdS thin films were a critical step in the fabrication of high-efficiency polycrystalline CdTe/CdS solar cells. The effects of CdCl 2 vapor treatment on CdS films were investigated. The changes in structure, grain size and the band gap of CdS films before and after CdCl 2 treatment were studied by XRD and UV/Vis. A comparison between the structure of CdS films with and without CdCl 2 treatment was presented. The results show that CdS films annealed at 410 ℃ without thermal treatment by CdCl 2 show the existence of Cd. With the increase of annealing temperature and annealing time, the cubic phases of CdS films are destroyed. The intensity of XRD (111) peaks of CdS films decrease violently when annealing temperature is over 410 ℃ and nearly diminishes after annealing at 470 ℃ for an hour.

关 键 词：薄膜太阳能电池 二氧化镉 硫化镉薄膜 气相 退火 

分 类 号：TM914.42[电气工程—电力电子与电力传动]