SiI3pNs^3P^0、1~P^0J=1奇宇称系高激发态结构MQDT分析  

MQDT Analysis for High-Excited States Structure of SiI3pNs^3P^0, ~1p^0 J=1 Odd-Parity Series

作　　者：梁万珍[1] 

机构地区：[1]兰州铁道学院基础课部

出　　处：《兰州铁道学院学报》1991年第3期61-68,共8页Journal of Lanzhou Railway University

摘　　要：利用HF计算结果确定了硅原子3s^23pNs ~3P^0、~1P^0J=1奇宇称系的MQDT(Multichannel Quantum Defect Theory)基本结构参数,并且根据这些参数获得了这两个系的分离态能级、混合系数和振子强度。结果与已有的实验数据符合得很好。The MQDT basic structure parameters for SiI 3s^2 3pNs ~3P^0, ~1P^0 J=1 odd-parity had been gained by using MCHF calculation results and we also obtained discrete rydberg levels and their mixing coefficients and oscillator strengths with the parameters as input. The results are in good agreement with the experimental data.

关 键 词：量子亏损 宇称 激发态 

分 类 号：O562.1[理学—原子与分子物理]