VGF结晶法中砷化镓表面平衡温度的计算  

Determination of the equilibrium temperature on the surface of gallium arsenide crystal in VGF system

作　　者：魏东[1] 马一太[1] 李贵全 王占龙 

机构地区：[1]天津大学热能研究所,天津300072 [2]信息产业部电子第四十六研究所,天津300220

出　　处：《上海理工大学学报》2001年第3期279-282,共4页Journal of University of Shanghai For Science and Technology

摘　　要：根据VGF结晶技术的特点,建立了结晶炉内的辐射换热模型,并利用有限差分法对变温条件下砷化镓晶体表面的辐射换热进行了数值求解. 模拟结果得出了晶体表面平衡温度的变化规律,与设定值比较具有良好的一致性. 所得结果确定了晶体生长过程数值模拟的热边界条件,并对实际的温度控制提供了重要的理论依据.In view of the characteristic of VGF (Vertical Gradient Freeze) technique, the radiation heat transfer model of the VGF furnace is established, and detailed simulations of the radiation heat transfer in the VGF system using a finite difference method under the varying temperature condition is presented. The equilibrium temperature profiles of the ampoule are gained by the numerical method and the comparison with tailored temperature of the furnace wall shows a good agreement with the simulations. The results drawn in the paper can be used as thermal boundary conditions in the simulation of growth process, and give the directions of practical temperature control.

关 键 词：VGF 砷化镓 平衡温度 辐射换热 

分 类 号：TN304.23[电子电信—物理电子学]