微波晶体管参数的测量方法  

Measurements of Microwave Transistor Parameters

作　　者：沈庭芝[1] 方子文[1] 

机构地区：[1]北京理工大学,北京100081

出　　处：《微波学报》1998年第2期182-187,共6页Journal of Microwaves

摘　　要：本文用信号流国和矩阵方法分析了测量激彼晶体管S参数的三种方法，分别给出了10个和8个误差参数信号流图新的显式解。为各种型号的矢量网络分析仪测量做液晶体管S参数，提供了精确测试方法。Three method which are effective in maret of microwave transister's Sparameters are analyzed by using signal flow chart and matrix ways. The novel forms related to tenand eight deviation parameter signal flow charts are given respetively. Methods of precise measurmentsfor microwave transistor's S parameteres by various vector network analyses are provided.

关 键 词：信号流图 误差模型 校准方法 微波晶体管 

分 类 号：TN32[电子电信—物理电子学]