等离子体发射光谱法测定单晶硅中微量锗  

Determination of Trace Germanium in Monocrystalline Silicon by ICP-AES

作　　者：薛进敏[1] 

机构地区：[1]中国科学院物理研究所

出　　处：《光谱实验室》1997年第1期38-40,共3页Chinese Journal of Spectroscopy Laboratory

摘　　要：本文阐述了用等离子体发射光谱法测定单晶硅中微量锗的方法。试验了三种样品制备方法,结果表明,样品溶解于硝酸加氢氟酸中,除去硅后直接测定铝的方法最好,其检出限是0.0237μg／mL,合成样品的回收率为99.9％—100.2％,相对标准偏差小于3.6％。In this paper,a method for determining of trace germanium in monocrystalline silicon by ICP-AES is described. Three methods have been tested to prepare the samples. The sample is dissolved in HNO3-HF,then is the germanium determined directly after the silicon is removed. Result show that this method has best precision and accuracy. The detection limit is 0. 03μg Ge/mL,recoveries for synthetic samples are 99. 9 % -100. 2 %,the relativt standard deviation is less than 3. 6%. The results are satisfactory.

关 键 词：锗 单晶硅 ICP-AES 半导体材料 测定 微量分析 电感耦合等离子发射光谱法 

分 类 号：TN304.12[电子电信—物理电子学]