一种宽带低噪声中频放大器的设计  

Design of a Wide-Band Low-Noise Intermediate Frequency Amplifier

作　　者：崔士巡[1] 

机构地区：[1]信息产业部电子第二十四研究所,重庆400060

出　　处：《微电子学》2001年第5期370-375,共6页Microelectronics

摘　　要：介绍了一种基于高频低噪声双极浅结工艺的低噪声、宽带中频放大器单片集成电路。从电路结构和版图设计两方面详细论述了该电路的增益设计、宽带设计和低噪声设计等设计思路 ,并给出了实验结果。该电路在通讯、导航。A low noise, wide band IF amplifier is presented in the paper, which is based on a high frequency, low noise bipolar shallow junction process. Considerations on gain, wide band and low noise design of the circuit are dealt with. Experimental results are given. This circuit finds wide applications in telecommunication, navigation, radar and other electronic systems.

关 键 词：中频放大器 模拟集成电路 双极工艺 噪声放大器 

分 类 号：TN722.13[电子电信—电路与系统]