钴基非晶丝应力电阻抗效应  

Stress impedance effect in Co-based amorphous wire

作　　者：鲍丙豪[1] 

机构地区：[1]安徽机电学院应用数理系,安徽芜湖241000

出　　处：《传感器技术》2001年第8期44-45,48,共3页Journal of Transducer Technology

基　　金：国家非晶微晶工程研究中心基金 ( 1998.0 3);安徽省教委自然科学基金资助项目 ( 98JL0 33)

摘　　要：研究了钴基非晶丝材料显示的应力电阻抗 (SI)效应。结果表明 ,淬态钴基非晶丝在其两端受到外加轴向压力作用下可呈现显著的应力电阻抗效应 。The stress impedance (SI) effect in Co based amorphous wire is studied.The results show that the as quenched Co based amorphous wire appear giant SI effect when both ends of the amorphous wire are applied external axial compression force. The effect is related to the frequency and the amplitude of the driving current.

关 键 词：钴基非晶丝 应力电阻抗 驱动电流 非晶态合金材料 

分 类 号：TG139.8[一般工业技术—材料科学与工程]