Yb_2O_3的掺杂方式对Ba(Ti_(1-y)Zr_y)O_3陶瓷介电性能的影响  

Influence of Doping Style of Yb_2O_3 on Dielectric Character of Ba(Ti_(1-y)Zr_y)O_3 Ceramics

作　　者：齐建全[1] 桂治轮[1] 王永力[1] 李琦[1] 李龙土[1] 

机构地区：[1]清华大学材料系新型陶瓷与精细工艺国家重点实验室,北京100084

出　　处：《无机材料学报》2001年第5期989-992,共4页Journal of Inorganic Materials

摘　　要：在Ｂａ（Ｔｉ１－ｙＺｒｙ）Ｏ３中，Ｙｂ２Ｏ３的不同掺杂方式引起了材料性能的显著变化．采用 Ｂａ（Ｔｉ１－ｙＺｒｙ）Ｏ３合成后Ｙｂ２Ｏ３的适量掺杂，陶瓷介温峰明显地移动，介电常数大幅度提高， 获得了室温介电常数＞２５０００，１２５０℃左右烧成，符合Ｙ５Ｖ标准的高介材料．合成后掺杂的 Ｙｂ２Ｏ３，使材料介电常数提高，可能与施主掺杂引入的局域化电子有关．合成前掺杂Ｙｂ２Ｏ３ 的样品，介电常数较低，移峰效率偏小，可能是Ｙｂ的Ｔｉ位受主取代使施主引入的局域化电子 得到补偿的结果．A distinct diversification of dielectric character of Ba(Ti1-yZry)O-3 ceramics doped with Yb2O3 in different doping style was observed. When adapted content of Yb2O3 is added after synthesis of Ba(Ti1-yZry)O-3, the ferroelectric phase transition points of the ceramics are shifted distinctly, and the dielectric constants at these points increase greatly. This doping method at 1250 degreesC results in the sample with a high dielectric constant over 25000 at room temperature and according with Y5V specifications. The enhancement of dielectric constant of Ba(Ti1-yZry)O-3 caused by the doping of Yb2O3 after synthesis is associated with the localization of electrons produced by donor doping. Doping by Yb2O3 before synthesis results in the sample with a relative low dielectric constant and a weak efficiency of Curie point shifting. This is due to the compensation of localized-electrons by acceptors that introduced by the doping of Yb3+ replacing Ti site in perovskite lattice.

关 键 词：YB2O3 Ba(Ti1-yZry)O3 介电性能 氧化镱 掺杂方式 氧化钡陶瓷 

分 类 号：TQ174.758[化学工程—陶瓷工业] TQ174.1[化学工程—硅酸盐工业]