(Y_2O_3,Yb_2O_3)复合掺杂ZrO_2材料的中低温电导率  

Conductivity of Y_2O_3 and Yb_2O_3 co-doped zirconia materials in the intermediate and low temperature range

作　　者：李英[1] 谢裕生[1] 唐子龙[2] 龚江宏[2] 张中太[2] 

机构地区：[1]中国科学院化工冶金研究所,北京100080 [2]清华大学材料科学与工程系,北京100084

出　　处：《功能材料》2001年第5期484-486,489,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目 (698780 1 1 )

摘　　要：采用交流复阻抗技术对 (Y2 O3,Yb2 O3)复合掺杂ZrO2材料在 5 73～ 873K这一温度范围的离子电导率随组成的变化关系进行了研究 ,发现在ZrO2 Y2 O3 系统中加入Yb2 O3 会使得材料在中低温区域电导率降低。用经典的Arrhenius公式对实验数据进行的分析表明 ,电导率降低的原因在于Yb3 + 与结构中氧空位之间的缔合比Y3+ 与氧空位之间的缔合更甚 。Compositional dependence of conductivity in the Y2O3 and Yb2O3 co-doped ZrO2 materials at 573-873 K was studied by the complex impedance technique. It was found that adding Yb2O3 into the ZrO2-Y2O3 system can decrease the conductivity in the intermediate and low temperature range. Analyzing the experimental data with the classical Arrhenius equation shows that the reason for the decrease of conductivity in the intermediate and low temperature range is that the association between Yb3+ and oxygen vacancy, which is stronger than that between Y3+ and oxygen vacancy, hinders the migration of oxygen vacancy.

关 键 词：掺杂 电导率 复阻抗 Arrhenius公式 氧化锆 固体电解质 

分 类 号：TM215[一般工业技术—材料科学与工程]