多孔硅于甲酸—甲酸钠溶液阳极偏压下的电致发光研究  

Studies on the Electroluminescence of Porous Silicon in Formic Acid- Sodium Formate Solution at Positive Biases

作　　者：张占军[1] 李经建[1] 武斌[1] 刘忠范[1] 蔡生民[1] 

机构地区：[1]北京大学化学与分子工程学院,

出　　处：《化学学报》2001年第10期1587-1591,共5页Acta Chimica Sinica

基　　金：国家自然科学基金，高等学校博士学科点专项科研项目，中国博士后科学基金

摘　　要：用荧光分光光度法现场监测了多孔硅于甲酸-甲酸钠溶液阳极偏压下的电致发光行为发现该体系的电致发光峰值随着阳极偏压增大而发生蓝移;发光峰能量值与阳极偏压呈良好的线性关系,其斜率与多孔硅在阴极偏压下电致发光的结果一致.扫描探针技术研究表明:多孔硅的表面形貌明显地影响其发光性质.提出了多孔硅在甲酸-甲酸钠溶液中阳极偏压下的电致发光与多孔硅表面的Si-H键的氧化作用有关的发光机理发现了多孔硅于甲酸-甲酸钠溶液中在阳极偏压下电压调制的可见光发射行为。The electroluminescence of porous silicon in formic acid and sodium formate solution at positive biases was investigated by luminescence spectrometer. It was discovered that the blue shift for peak wave lengths of electroluminescence occurred when the positive bias was increased. The emitted photon energy depended linearly on the positive biases, the slope of which was in agreement with that of elelctroluminescence at negatively biased condition. It was shown by scanning probe technique that there was close relation between luminescence properties of porous silicon and its surface images. It was suggested that the electroluminescence of porous silicon in the solution of formic acid and sodium formate stemmed from the oxidation of Si-H bonds on the surface of porous silicon. The voltage tunable emitting for porous silicon in formic acid - sodium formate solution at positive biases was revealed, which could be explained by the quantum confinement effect.

关 键 词：多孔硅 电致发光 甲酸 甲酸钠 电势偏压 电压调制 量子限制效应 阳极偏压 硅发光材料 电氧化 

分 类 号：O482.31[理学—固体物理]