热处理气氛及掺钴对NiO电极赝电容器性能的影响  

Pseudocapacitors utilizing NiO as electrodes

作　　者：梁逵[1,2] 陈艾[1] 何莉[1] 谭昌瑶[3] 

机构地区：[1]电子科技大学信息材料工程学院 [2]四川工业学院,四川成都610039 [3]四川工业学院

出　　处：《电子元件与材料》2001年第5期1-2,共2页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(50082001)

摘　　要：在讨论赝电容形成机理的基础上,应用电化学阴极沉积法在Ni基片上制得Ni(OH)2膜,经热处理得到NiO膜。研究发现,Ni(OH)2在空气中热处理所得NiO在KOH水溶液中能形成赝电容,但在N2气氛中热处理所得的NiO在KOH水溶液中未能形成赝电容;钴掺入NiO使比电容量显著增大。Preparation of nickel oxide film by means of cathode electrodeposition and pscudocapacitance mechanism are discussed. NiO is acquired by heat treating Ki(OH)2 in air or in N2. Pseudocapacitance forms, when the NiO acquired in air being treated in KOH water solution, but it is not with the NiO acquired in N2. When doping NiO with Co, a remarkable increace of specific capacitance is found (8 refs)

关 键 词：赝电容器 氧化镍 热处理气氛 钴掺杂 性能 

分 类 号：TM53[电气工程—电器]