分子镀法制备Ba靶  

Preparation of Ba Target With Molecular Plating Method

作　　者：肖永厚[1] 杨维凡[1] 袁双贵[1] 李英俊[1] 徐岩冰[1] 潘强岩[1] 何建军[1] 

机构地区：[1]中国科学院近代物理研究所,甘肃兰州730000

出　　处：《同位素》2001年第3期184-187,共4页Journal of Isotopes

基　　金：国家自然科学基金资助项目 (1 9775 0 5 5 ;1 0 0 75 0 63 );国家重点基础研究发展规划 (G2 0 0 0 0 774 0 0 );中国科学院基金资助项目 (KJ95 T-0 3 )

摘　　要：用铂丝作阳极 ,不锈钢底衬作阴极 ,在异丙醇 -盐酸介质中制备 Ba靶。对影响 Ba电镀的因素——电镀时间和电流密度进行了探讨。通过高纯锗探测器测量 13 3 Ba示踪剂的活性确定 Ba的电沉积效率。结果表明 ,电流密度为 4 .0～ 6 .0 m A/cm2 时 ,通过分子镀沉积 30 min可在不锈钢片上获得均匀、牢固的 Ba镀层 ,其厚度为 0 .5～ 1.0 mg/cm2 。The thin films of Ba are prepared by electro deposition from the isopropyl HCl mixture with a platinum wire as anode and a stainless steel plate as cathode. The influence of current desity and deposition time on deposition efficiency of barium is studied. The activities of 133 Ba tracer are measured by a HPGe detector to determine the deposition yield of barium. The results show that uniform and adhering films of barium are obtained on stainless steel foils by molecular plating method, and the thickness of Ba films is 0.5～1.0 mg/cm 2 under the conditions of the current density of 4～6 mA/cm 2 and the deposition time of about 30 min.

关 键 词：分子镀 Ba靶 电流密度 沉积效率 钡靶 核反应实验 重离子核反应 

分 类 号：O571.6[理学—粒子物理与原子核物理] O572.21[理学—物理]