两元P-型梯度结构热电材料FeSi_2/Bi_2Te_3的制备与性能  

Preparation and performance of P-type FeSi_2/Bi_2Te_3 segmented thermoelectric material

作　　者：崔教林[1] 赵新兵[1] 朱铁军[1] 胡淑红[1] 

机构地区：[1]浙江大学材料科学与工程系,杭州310027

出　　处：《中国有色金属学报》2001年第6期1089-1093,共5页The Chinese Journal of Nonferrous Metals

基　　金：国家自然科学基金资助项目 ( 5 99710 44)

摘　　要：采用热浸焊法用纯Sn作为过渡层制备了P 型FeSi2 /Bi2 Te3 梯度结构热电材料并对其热电性能进行了测试。发现当热端温度在 5 10℃以下时 ,梯度结构热电材料的平均Seebeck系数保持恒定 ,达 2 2 0 μV/K至 2 5 0μV/K左右 ,显著高于单一均质材料 (Bi2 Te3 和 β FeSi2 )在相同温度范围内的平均Seebeck系数。梯度结构热电材料的输出功率较单种材料高 1.5至 2倍以上 ,且当材料经 190℃ ,10 0h与 2 0 0h的真空退火后 ,输出功率几乎不变。金相观察表明 ,在Sn层与两半导体界面处 ,没有明显的Sn扩散迹象 ,说明在所试验的条件下 ,用Sn作为过渡层热稳定性较好。The segmented thermoelectric material of P type β FeSi 2/Bi 2Te 3 was prepared by means of dip coating procedure and using pure tin as the bridge material. It was found that the apparent Seebeck coefficients of the segmented materials are invariable with the applied temperature difference, and reaches an approximation of 220 to 250?μV/K, which is obviously higher than those of the monolithic ones ( β FeSi 2 and Bi 2Te 3) in the same temperature range. The measurements show that the power outputs of the segmented materials are about 1.5 to 2 times higher than that of the monolithic ones, and remain stationary even when the materials have been annealed at 190?℃ 200?h. The microstructure of interfaces shows no visible diffusion of tin in the semiconductor matrixes.

关 键 词：热电性能 梯度结构材料 输出功率 过渡层 FeSi2/Bi2Te3 热电材料 

分 类 号：TN37[电子电信—物理电子学]