β′-钼酸钆晶体的生长与畴结构观察  

Growth of β′-Gd_2(MoO_4)_3 Crystal and the Observation of Its Domain Structure

作　　者：袁清习[1] 赵春华[1] 殷晓峰[1] 罗卫平[1] 徐军[1] 潘守夔[1] 

机构地区：[1]中国科学院上海光学精密机械研究所,上海201800

出　　处：《人工晶体学报》2001年第3期273-279,共7页Journal of Synthetic Crystals

基　　金：国家自然科学基金资助项目 (No.698780 3 0 )

摘　　要：用提拉法生长了质量较好的铁电 -铁弹 β′ Gd2 (MoO4 ) 3 晶体。研究了晶体中包裹物的形成原因及晶体转速、提拉速度、温度梯度等对包裹物的影响 ,分析了晶体开裂的类型及克服的方法。指出了用提拉法生长高质量 β′ Gd2 (MoO4 ) 3 晶体的合适工艺参数。用偏光显微镜对晶体中的畴结构进行了观察 ,发现样品中存在宽畴和细畴两种类型 ,结合同一样品减薄实验确定了晶体中的宽畴为铁电畴 ,细畴为铁弹畴。The ferroelectric-ferroelastic β′-Gd 2(MoO 4) 3 crystals have been grown by using Czochralski technique.The causes of forming inclusions and the influences of rotating speed,pulling rate and temperature gradient on the inclusions formed have been investigated.The types of the crystal cracks were described.The compatible growth parameters for high quality β′-Gd 2(MoO 4) 3 were given out.Two types of domain structure (broad and narrow) have been found in the β′-Gd 2(MoO 4) 3 crystal samples of orientation using microscope.The broad domain and the narrow domain have been confirmed to be the ferroelectric domain and the ferroelastic domain respectively by the experiment of thinning down with a sample.

关 键 词：提拉法 晶体生长 铁电-铁弹晶体 铁电畴 铁弹畴 钼酸钆晶体 

分 类 号：O782.8[理学—晶体学] O766.1